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| SMD Ultra Fast Recovery Rectifier COMCHIP www.comchip.com.tw CURM101 Thru CURM107 Reverse Voltage: 50 - 1000 Volts Forward Current: 1.0 Amp Features Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Exceeds environmental standard MIL-S19500/228 Low leakage current MINI SMA 0.161(4.10) 0.146(3.70) 0.012(0.30) Typ. 0.071(1.80) 0.055(1.40) Mechanical data Case: Mini SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.04 gram 0.110(2.80) 0.094(2.40) 0.063(1.60) 0.055(1.40) 0.035(0.90) Typ. 0.035(0.90) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Typical. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol VRRM VDC VRMS IFSM CURM 101 50 50 35 CURM 102 100 100 70 CURM 103 200 200 140 CURM 104 400 400 280 CURM 105 600 600 420 CURM 106 800 800 560 CURM 107 1000 1000 700 Unit V V V A 30 Io VF Trr IR R 1.0 50 1.0 1.3 1.7 75 5.0 50 42 -55 to +150 -55 to +150 A V nS uA JA C/W C C Tj TSTG Note 1: Thermal resistance from junction to ambient. MDS0208019B Page 1 SMD Ultra Fast Recovery Rectifier COMCHIP www.comchip.com.tw Rating and Characteristic Curves (CURM101 Thru CURM107) Fig. 1 - Reverse Characteristics 1000 10 10 Fig.2 - Forward Characteristics 1- 10 3 Reverse Current ( uA ) Forward Current ( A ) Tj=125 C 100 CU CU 1.0 RM RM 10 10 1.0 Tj=25 C 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 0 0.001 20 40 60 80 100 120 140 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 175 Fig. 4 - Non Repetitive Forward Surge Current Peak surge Forward Current ( A ) 30 24 8.3mS Single Half Sine Wave JEDEC methode Junction Capacitance (pF) 120 100 80 60 40 20 0 0.01 0.1 =1MHz and applied 4VDC reverse voltage 18 Tj=25 C 12 6 0 1.0 10 100 1 CU 0.1 5 RM 10 5- 10 10 7 4 50 1 00 Reverse Voltage (V) Number of Cycles at 60Hz Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 1.4 Average Forward Current ( A ) trr | | | | | | | | 1.2 1.0 0.8 0.6 0.4 0.2 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0208019B Page 2 |
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